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2024
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05
Times Electric: Striving to advance independent R&D in SiC technology, with breakthroughs in its high-voltage electric drive platform.
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According to an announcement on the HuiBo Information official account, Shidai Electric has established industrial production facilities for 6-inch bipolar devices, 8-inch IGBTs, and 6-inch silicon carbide products. The company has mastered the design and manufacturing technologies for MOSFET and SBD chips, both of which are underpinned by core proprietary intellectual property. It has also built a specialized, 4- and 6-inch‑compatible silicon carbide chip fabrication platform that incorporates a full suite of advanced, proprietary SiC process technologies. Its MOSFET and SBD chips, available across all voltage ratings, are applicable in multiple sectors, including new‑energy vehicles, rail transit, and industrial drives. In 2021, the company launched the C‑Power220 high‑power electric drive platform based on silicon carbide. In April 2022, it initiated a project to upgrade its silicon carbide chip production line, with a total investment of RMB 462 million. This initiative will elevate the company’s planar‑gate SiC MOSFET technology to trench‑gate SiC MOSFET R&D capabilities, expand its existing 4‑inch SiC chip line into a 6‑inch line, and increase annual production capacity from 10,000 wafers to 25,000 wafers.
According to an announcement on the HuiBo Information official account, Shidai Electric has established industrial production facilities for 6-inch bipolar devices, 8-inch IGBTs, and 6-inch silicon carbide products. The company has mastered the design and manufacturing technologies for MOSFET and SBD chips, both of which are protected by core proprietary intellectual property rights. It has also built a specialized, 4- and 6-inch‑compatible silicon carbide chip fabrication platform that incorporates a full suite of advanced, proprietary silicon carbide process technologies. Its MOSFET and SBD chips, available across all voltage ratings, are applicable to multiple sectors, including new‑energy vehicles, rail transit, and industrial drives. In 2021, the company launched the C‑Power220 high‑power electric drive platform based on silicon carbide. In April 2022, it initiated a project to upgrade its silicon carbide chip production line, with a total investment of RMB 462 million. This initiative will elevate the company’s capabilities from planar‑gate silicon carbide MOSFET technology to trench‑gate silicon carbide MOSFET R&D, expand its existing 4‑inch silicon carbide chip line into a 6‑inch line, and increase annual production capacity from 10,000 wafers to 25,000 wafers.
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