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2024
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05
Sanan Optoelectronics: The largest SiC investment, with an IDM strategy that combines existing fabs and in-house substrate supply.
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According to an announcement on the HuiBo Information official account, Sanan Optoelectronics has established China’s first vertically integrated silicon carbide supply chain and has achieved multiple breakthroughs in downstream markets for silicon carbide. In 2019, Sanan Integrated partnered with Midea to set up a third-generation semiconductor joint laboratory, focusing on R&D related to GaN and SiC power‑device chips as well as IPM application circuits. In 2020, the company acquired Beidian New Materials, expanding its footprint in the silicon carbide substrate and epitaxy markets. In 2021, the Hunan Sanan Semiconductor base began production, with a total investment of RMB 16 billion; the accompanying 6‑inch silicon carbide fab reached a full‑capacity output of 360,000 wafers per year, and is expected to generate annual sales of RMB 12 billion once fully ramped up. By the end of 2021, monthly production capacity stood at 3,000 wafers, with full capacity anticipated by the end of 2022. Meanwhile, the company’s industrial‑grade silicon carbide MOSFET products are already undergoing customer validation, while its automotive‑grade silicon carbide MOSFETs have entered the six‑chip design and testing phase with automakers. Also in 2021, the company completed its product lineup spanning SiC diodes from 650 V to 1,700 V, with cumulative shipments exceeding one million units. In 2022, Sanan joined forces with Li Auto to establish Suzhou Sike Semiconductor Co., Ltd., concentrating on the design and manufacturing of automotive‑grade silicon carbide chip modules, with plans to build a half‑bridge production line capable of 2.4 million units per year.
According to an announcement on the HuiBo Information official account, Sanan Optoelectronics has established China’s first vertically integrated silicon carbide supply chain and has achieved multiple breakthroughs in downstream markets for silicon carbide. In 2019, Sanan Integrated partnered with Midea to set up a third‑generation semiconductor joint laboratory, focusing on R&D related to GaN and SiC power device chips as well as IPM application circuits. In 2020, the company acquired Beidian New Materials, expanding its footprint in the silicon carbide substrate and epitaxy markets. In 2021, the Hunan Sanan Semiconductor Base went into production, with a total investment of RMB 16 billion; it boasts a fully operational 6‑inch silicon carbide capacity of 360,000 wafers per year, expected to generate annual sales of RMB 12 billion once at full capacity. By the end of 2021, monthly production had reached 3,000 wafers, with full capacity anticipated by the end of 2022. Meanwhile, the company’s industrial‑grade silicon carbide MOSFET products are currently undergoing customer validation, while its automotive‑grade silicon carbide MOSFETs have entered the six‑chip design and testing phase with automakers. Also in 2021, the company completed its product lineup spanning SiC diodes from 650 V to 1,700 V, with cumulative shipments exceeding one million units. In 2022, Sanan joined forces with Li Auto to establish Suzhou Sike Semiconductor Co., Ltd., concentrating on the design and manufacturing of automotive‑grade silicon carbide chip modules, with plans to build a half‑bridge production line capable of 2.4 million units per year.
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