17

2024

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05

New applications are continuously emerging in the electric‑vehicle sector, and automakers are actively adopting a silicon‑carbide strategy.

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The electric vehicle industry is an emerging market with vast potential, and as EVs continue to evolve, demand for power semiconductor devices is steadily rising. With the scaling up of electric vehicles, 800V high‑voltage fast‑charging platforms are gaining traction, leveraging silicon carbide to deliver superior performance. As range anxiety increasingly becomes a central focus in EV development, high‑voltage fast charging has emerged as an inevitable trend. Consequently, 800V fast‑charging platforms—designed to significantly enhance both charging speed and overall vehicle efficiency—are being rapidly deployed. Their development places stringent demands on motor insulation and high‑temperature resistance. Compared with silicon‑based IGBTs, which have already approached material limits, silicon carbide offers distinct advantages—smaller footprint, superior thermal and high‑voltage tolerance—making it better suited to improve space utilization and power efficiency while delivering greater overall benefits. The advancement of 800V high‑voltage fast‑charging platforms is pivotal, driving improvements in vehicle range and system efficiency. As EV adoption accelerates, the need for longer ranges and faster charging rates is becoming ever more pressing; compared with 400V systems, 800V platforms are better aligned with the evolving demands of the times.

The electric vehicle industry is an emerging market with vast growth potential, and as EVs continue to advance, demand for power semiconductor devices is steadily rising. With the scaling up of EV production, 800V high‑voltage fast‑charging platforms are gaining traction, leveraging silicon carbide to deliver superior performance. As range anxiety increasingly becomes a central focus in EV development, high‑voltage fast charging has emerged as an inevitable trend. Consequently, 800V fast‑charging platforms—designed to significantly enhance both charging speed and overall vehicle efficiency—are being rapidly deployed. Their development places stringent demands on motor insulation and high‑temperature resistance. Compared with silicon‑based IGBTs, which have already approached material limits, silicon carbide offers distinct advantages—smaller footprint, superior thermal and high‑voltage tolerance—making it better suited to improve space utilization and power efficiency while delivering greater overall benefits. The advancement of 800V high‑voltage fast‑charging platforms is pivotal, driving improvements in vehicle range and system efficiency. As EV adoption accelerates, the need for longer ranges and faster charging rates is becoming ever more pressing; compared with 400V systems, 800V platforms are better aligned with contemporary technological and market requirements.

Sales of new-energy vehicles continue to rise, and the market for silicon carbide holds significant growth potential. Supported by government subsidies, tax rebates, and an ever‑improving charging infrastructure, both the global sales volume and market share of NEVs are steadily increasing. In 2021, NEV sales reached 6.5 million units, up 109% year over year, accounting for 9% of total global car sales. By 2025, NEV sales are projected to exceed 21 million units, with silicon carbide penetration in the NEV sector expected to surpass 20%.

Meanwhile, as sales of new-energy vehicles continue to rise, demand for silicon carbide wafers driven by silicon carbide power devices is also steadily increasing. According to data from TrendForce, global demand for 6-inch silicon carbide wafers in the electric-vehicle market is projected to reach 1.69 million units by 2025.

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