17
2024
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05
Silicon carbide substrate production capacity is expanding at an accelerated pace.
Author:
According to an announcement on the HuiBo Information official account, Lusiao Technology is among the earliest domestic companies to develop 6-inch SiC wafers and has mastered end-to-end technologies and process solutions covering silicon carbide single-crystal growth, slicing, grinding, polishing, and cleaning. In 2021, the company launched two fundraising projects—the “Third-Generation Power Semiconductor (Silicon Carbide) Industrial Park Project” and the “R&D Center for Large-Size Silicon Carbide Substrates”—with plans to establish a production line capable of 240,000 wafers per year. In 2022, the company began selling 6-inch silicon carbide substrate wafers, with projected monthly capacity reaching 5,000 wafers by year-end and annual capacity climbing to 200,000 wafers in 2023.
According to an announcement on the HuiBo Information official account, Lusiao Technology is among the earliest domestic companies to develop 6-inch SiC wafers and has mastered end-to-end technologies and process solutions covering silicon carbide single-crystal growth, slicing, grinding, polishing, and cleaning. In 2021, the company launched two fundraising projects—the “Third-Generation Power Semiconductor (Silicon Carbide) Industrial Park Project” and the “R&D Center for Large-Size Silicon Carbide Substrates”—with plans to establish a production line capable of 240,000 wafers per year. In 2022, the company began selling 6-inch silicon carbide substrate wafers, with projected monthly capacity reaching 5,000 wafers by year-end and annual capacity climbing to 200,000 wafers in 2023.
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