05-17
→According to an announcement on the HuiBo Information official account, Sanan Optoelectronics has established China’s first vertically integrated silicon carbide supply chain and has achieved multiple breakthroughs in downstream markets for silicon carbide. In 2019, Sanan Integrated partnered with Midea to set up a third-generation semiconductor joint laboratory, focusing on R&D related to GaN and SiC power‑device chips as well as IPM application circuits. In 2020, the company acquired Beidian New Materials, expanding its footprint in the silicon carbide substrate and epitaxy markets. In 2021, the Hunan Sanan Semiconductor base began production, with a total investment of RMB 16 billion; the accompanying 6‑inch silicon carbide fab reached a full‑capacity output of 360,000 wafers per year, and is expected to generate annual sales of RMB 12 billion once fully ramped up. By the end of 2021, monthly production capacity stood at 3,000 wafers, with full capacity anticipated by the end of 2022. Meanwhile, the company’s industrial‑grade silicon carbide MOSFET products are already undergoing customer validation, while its automotive‑grade silicon carbide MOSFETs have entered the six‑chip design and testing phase with automakers. Also in 2021, the company completed its product lineup spanning SiC diodes from 650 V to 1,700 V, with cumulative shipments exceeding one million units. In 2022, Sanan joined forces with Li Auto to establish Suzhou Sike Semiconductor Co., Ltd., concentrating on the design and manufacturing of automotive‑grade silicon carbide chip modules, with plans to build a half‑bridge production line capable of 2.4 million units per year.
05-17
→According to an announcement on the HuiBo Information official account, Shidai Electric has established industrial production facilities for 6-inch bipolar devices, 8-inch IGBTs, and 6-inch silicon carbide products. The company has mastered the design and manufacturing technologies for MOSFET and SBD chips, both of which are underpinned by core proprietary intellectual property. It has also built a specialized, 4- and 6-inch‑compatible silicon carbide chip fabrication platform that incorporates a full suite of advanced, proprietary SiC process technologies. Its MOSFET and SBD chips, available across all voltage ratings, are applicable in multiple sectors, including new‑energy vehicles, rail transit, and industrial drives. In 2021, the company launched the C‑Power220 high‑power electric drive platform based on silicon carbide. In April 2022, it initiated a project to upgrade its silicon carbide chip production line, with a total investment of RMB 462 million. This initiative will elevate the company’s planar‑gate SiC MOSFET technology to trench‑gate SiC MOSFET R&D capabilities, expand its existing 4‑inch SiC chip line into a 6‑inch line, and increase annual production capacity from 10,000 wafers to 25,000 wafers.
05-17
→Silicon carbide substrate production capacity is expanding at an accelerated pace.
According to an announcement on the HuiBo Information official account, Lusiao Technology is among the earliest domestic companies to develop 6-inch SiC wafers and has mastered end-to-end technologies and process solutions covering silicon carbide single-crystal growth, slicing, grinding, polishing, and cleaning. In 2021, the company launched two fundraising projects—the “Third-Generation Power Semiconductor (Silicon Carbide) Industrial Park Project” and the “R&D Center for Large-Size Silicon Carbide Substrates”—with plans to establish a production line capable of 240,000 wafers per year. In 2022, the company began selling 6-inch silicon carbide substrate wafers, with projected monthly capacity reaching 5,000 wafers by year-end and annual capacity climbing to 200,000 wafers in 2023.
05-17
→The electric vehicle industry is an emerging market with vast potential, and as EVs continue to evolve, demand for power semiconductor devices is steadily rising. With the scaling up of electric vehicles, 800V high‑voltage fast‑charging platforms are gaining traction, leveraging silicon carbide to deliver superior performance. As range anxiety increasingly becomes a central focus in EV development, high‑voltage fast charging has emerged as an inevitable trend. Consequently, 800V fast‑charging platforms—designed to significantly enhance both charging speed and overall vehicle efficiency—are being rapidly deployed. Their development places stringent demands on motor insulation and high‑temperature resistance. Compared with silicon‑based IGBTs, which have already approached material limits, silicon carbide offers distinct advantages—smaller footprint, superior thermal and high‑voltage tolerance—making it better suited to improve space utilization and power efficiency while delivering greater overall benefits. The advancement of 800V high‑voltage fast‑charging platforms is pivotal, driving improvements in vehicle range and system efficiency. As EV adoption accelerates, the need for longer ranges and faster charging rates is becoming ever more pressing; compared with 400V systems, 800V platforms are better aligned with the evolving demands of the times.
05-17
→Photovoltaic, wind‑power, and energy‑storage inverters have traditionally relied on silicon devices; after more than four decades of development, their conversion efficiency and power density have approached theoretical limits. Conventional silicon‑based inverters account for roughly 10% of system costs yet remain one of the primary sources of energy losses. Silicon carbide devices can be deployed in wind‑power rectifiers, inverters, and transformers, reducing energy losses and boosting efficiency while cutting weight and cost by 25% and 50%, respectively. The expanding energy‑storage value chain is further unlocking market potential for silicon carbide. As the share of intermittent, variable renewable resources—such as solar and wind—continues to grow, society’s demand for greater energy stability is rising. Energy storage has emerged as a critical solution to address resource volatility and balance supply with demand in power systems, offering substantial market prospects. Silicon‑carbide‑based energy‑storage inverters improve system efficiency by 3%, increase power density by 50%, and reduce the size and cost of passive components, enabling widespread adoption in the energy‑storage sector.
05-17
→An Overview of Common Structural Ceramics and Their Application Areas
Advanced ceramics can be classified into structural ceramics and functional ceramics. Functional ceramics are primarily characterized by their specialized properties, such as electrical, magnetic, biological, thermosensitive, and optical characteristics. They include insulating and dielectric ceramics, ferroelectric ceramics, piezoelectric ceramics, semiconductors, and sensitive ceramics, among others. Structural ceramics, on the other hand, are designed for mechanical and structural applications, offering high strength, hardness, excellent resistance to high temperatures, corrosion, and oxidation. They are widely used in cutting tools, molds, wear-resistant components, pump and valve parts, engine components, heat exchangers, biomedical devices, and armor systems. Common materials include silicon nitride, silicon carbide, zirconium dioxide, boron carbide, titanium diboride, aluminum oxide, and sialon. ▼ Advanced Structural Ceramic Products and Their Applications Functional ceramics are often unseen yet indispensable, whereas some structural ceramic products may be more familiar to us. Today, let’s take a look at commonly used structural ceramic products: what are their key features, and how are they applied?
05-17
→What are the application areas of silicon carbide?
In roller‑kilns, tunnel kilns, and shuttle kilns used in industries such as high‑end daily‑use ceramics, sanitary ware, high‑voltage electrical porcelain, and glass, silicon carbide ceramics are typically selected as refractory materials for high‑temperature applications. For example, silicon carbide beams are well suited for load‑bearing structures in industrial kilns, exhibiting excellent high‑temperature mechanical properties, superior resistance to high‑temperature creep, and maintaining dimensional stability over long service life without bending or deformation. Silicon carbide roller bars, employed in the high‑temperature firing zone, offer outstanding thermal conductivity, helping to reduce energy consumption without increasing the weight of the kiln car. Meanwhile, silicon carbide cold‑air ducts, utilized in the cooling zone, demonstrate exceptional resistance to rapid thermal cycling, with a service life 5 to 10 times that of stainless steel pipes or other refractory materials such as alumina.
07-28
→How Silicon Carbide Has Evolved from Industrial Applications to Cutting-Edge Technologies
In the fields of science and industry, material innovation has always been a key driver of social progress. Silicon carbide: a shining gem, evolving from an industrial abrasive to high‑tech applications.
01-10
→What does particle size distribution mean? And what do D10, D50, and D90 represent?
The size of a particle is referred to as “grain size,” also known as “particle size” or “diameter.” When a particular physical property or behavior of the particle being measured most closely resembles that of a homogeneous sphere (or a combination of spheres) with a specific diameter, the diameter of that sphere (or the equivalent combination) is taken as the particle’s equivalent grain size (or its particle-size distribution). Of course, for non-spherical particles, the reported grain size depends on the measurement reference and the statistical method used; thus, the grain size can only be considered “equivalent.”
11-12
→What are the indicators for evaluating the quality of graphite electrodes?
Based on differences in raw materials and the physicochemical properties of the finished product, graphite electrodes are classified into: regular‑power graphite electrodes (RP), high‑power graphite electrodes (HP), and ultra‑high‑power graphite electrodes (UHP).
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