05-17
→According to Huibo Information Public Number, Sanan Optoelectronics has the country's first vertically integrated industrial chain of silicon carbide and has made many breakthroughs in the downstream market of silicon carbide. In 2019, San 'an Integration and the United States will set up a third-generation semiconductor joint laboratory, focusing on research and development related to GaN and SiC power device chips and IPM application circuits. In 2020, the company will acquire new materials from Nortel to expand the silicon carbide substrate and epitaxial market. In 2021, Hunan San 'an Semiconductor Base will be put into operation with a total investment of 16 billion yuan, supporting a production capacity of 360000 pieces of 6-inch silicon carbide per year, with an expected sales of 12 billion yuan per year, at the end of 2021, the production capacity is 3k pieces/month, and it is expected to reach production by the end of 2022. In addition, the company's silicon carbide MOSFET industrial products are already in the customer verification stage, and the silicon carbide MOSFET car gauge products are already in the design and testing stage of six pieces for car companies. In 2021, the company has completed the product line layout of 650V to 1700VSiC diodes, with a cumulative shipment of more than one million. In 2022, focusing on the design and production of silicon carbide car gauge chip modules, it is planned to form a 2.4 million/year half-bridge production line.
05-17
→According to the introduction of Huibo Information Public Number, Times Electric Company has built an industrialization base of 6-inch bipolar devices, 8-inch IGBT and 6-inch silicon carbide, mastered the design and manufacturing technology of MOSFET chips and SBD chips with core independent intellectual property rights, and built a complete set of 4-inch and 6-inch compatible professional silicon carbide chip manufacturing platforms with advanced silicon carbide technology, full-voltage MOSFET and SBD chip products can be used in new energy vehicles, rail transit, industrial transmission and other fields. In 2021, the company will launch a silicon carbide high-power electric drive platform C- Power220. In April 2022, the company will implement a silicon carbide chip production line technical capability improvement construction project with a total investment of 0.462 billion yuan to upgrade the company's planar gate silicon carbide MOSFET chip technical capability to trench gate silicon carbide MOSFET chip research and development capability. The existing 4-inch silicon carbide chip line will be upgraded to 6-inch silicon carbide chip line, and the production capacity will also be upgraded from 10000 to 25000 pieces/year.
05-17
→Silicon carbide substrate capacity to accelerate expansion
According to the public number of Huibo Information, Luxiao Technology Company is one of the earliest units in China to develop 6-inch SiC wafers. It has mastered the overall solution technology and process scheme of silicon carbide single crystal crystal growth, cutting, grinding, polishing and cleaning. In 2021, the company will raise funds for "the third generation power semiconductor (silicon carbide) industrial park project" and "the large-size silicon carbide substrate research and development center project" and plan to form a production line with a production capacity of 240000 pieces per year. In 2022, the company's 6-inch silicon carbide substrate chips have been sold, with an estimated production capacity of 5000 pieces/month at the end of the year and 200000 pieces/year in 2023.
05-17
→The electric vehicle industry is an emerging market with huge market space. With the development of electric vehicles, the demand for power semiconductor devices is increasing. The electric vehicle scale is 800V high-voltage fast-charging platform, which is equipped with silicon carbide. As the endurance problem has gradually become the focus of the development of electric vehicles, high-voltage fast charging has become the general trend. The 800V fast charging platform, which is conducive to greatly improving the charging performance and vehicle operation efficiency, has been accelerated. Its research and development puts forward higher requirements on the insulation and high temperature resistance of the motor. Compared with silicon-based IGBT, which has reached the material limit, silicon carbide is more conducive to improving space utilization and power efficiency due to its advantages of high temperature resistance, has a higher comprehensive benefit. The development of the 800V high-voltage fast-charging platform is heavy, driving vehicle life and vehicle efficiency. The accelerated penetration of electric vehicles puts forward higher requirements on the vehicle's endurance and charging rate. Compared with the 400V platform, the 800V high-voltage platform is more in line with the development needs of the times.
05-17
→Silicon devices have been widely used in photovoltaic, wind power and energy storage inverters. After more than 40 years of development, the conversion efficiency and power density are close to the theoretical limit. The cost of traditional inverters based on silicon-based devices accounts for about 10% of the system, but it is one of the main sources of system energy loss. Silicon carbide devices can be applied to wind power rectifiers, inverters and transformers, reducing energy loss and improving efficiency while reducing quality and cost by 25% and 50%, respectively. Energy storage industry chain development layout, silicon carbide market space further opened. With the gradual increase in the proportion of renewable resources with indirect and volatile characteristics such as photoelectric and wind power, the society has put forward higher requirements for energy stability. Energy storage has become the key to solve the problem of energy volatility and the matching of supply and demand of power system, and has great market potential. Silicon carbide energy storage inverter improves system efficiency by 3%, power density by 50%, and reduces the volume and cost of passive devices, it is widely used in the field of energy storage.
05-17
→Inventory of common structural ceramics and their application fields
Advanced ceramics can be divided into structural ceramics and functional ceramics according to their types. Functional ceramics are mainly based on the special functions of materials, with the characteristics of electrical properties, magnetism, biological properties, heat sensitivity and optical properties, mainly including insulating and dielectric ceramics, ferroelectric ceramics, piezoelectric ceramics, semiconductors and their sensitive ceramics, etc. Structural ceramics are mainly based on the mechanics and structural uses of materials, and have the characteristics of high strength, high hardness, high temperature resistance, corrosion resistance, oxidation resistance, etc, mainly used in cutting tools, molds, wear parts, pump and valve components, engine components, heat exchangers, biological components and armor equipment, the main materials are silicon nitride, silicon carbide, zirconium dioxide, boron carbide, titanium diboride, alumina and Sialon. ▼ Advanced structural ceramic products and applications Functional ceramics are products that we rarely see but are essential, but some structural ceramics products we may see directly. Today we take an inventory of common structural ceramic products, what are their characteristics and applications?
05-17
→What are the application areas of silicon carbide?
In roller kilns, tunnel kilns and shuttle kilns in high-grade daily-use ceramics, sanitary porcelain, high-voltage electric porcelain, glass and other industries, silicon carbide ceramics are usually selected as high-temperature kiln furniture materials. For example, silicon carbide beams are suitable for load-bearing structural frames in industrial kilns. It has excellent high-temperature mechanical properties, good high-temperature creep resistance and no bending deformation after long-term use. Silicon carbide roller bar has good thermal conductivity for high temperature firing belt, save energy consumption at the same time do not increase the weight of the kiln car; silicon carbide cold air pipe used in the kiln cooling zone has good cold and heat resistance, and its service life is 5 to 10 times that of refractory materials such as stainless steel pipes or alumina.
07-28
→How silicon carbide is from industrial applications to cutting-edge technology
In the field of science and technology and industry, the innovation of materials has always been an important force to promote social progress. Silicon Carbide: A Bright Pearl from Industrial Abrasives to High-Tech Applications
01-10
→What does particle size distribution mean? What do D10, D50 and D90 represent?
The size of the particles is called "grain size", also known as "particle size" or "diameter". When a certain physical property or physical behavior of the measured particle is closest to a homogeneous sphere (or combination) of a certain diameter, the diameter (or combination) of the sphere is taken as the equivalent particle size (or particle size distribution) of the measured particle. Of course, for non-spherical particles, the particle size is related to the measurement basis and statistical method, and the particle size can only be "equivalent.
11-12
→What are the indicators to measure the quality of graphite electrodes?
Graphite electrodes are divided into ordinary power graphite electrode (RP), high power graphite electrode (HP) and ultra high power graphite electrode (UHP) according to the different physical and chemical indexes of raw materials and finished products.
The company's products are not only well received in the country, but also exported to East Asia, Southeast Asia, Europe, the Middle East and South America and other countries and regions, has been generally recognized.
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