17
2024
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05
Time Electric: Strive into the road of SiC independent research and development, high-voltage electric drive platform breakthrough.
Author:
According to the introduction of Huibo Information Public Number, Times Electric Company has built an industrialization base of 6-inch bipolar devices, 8-inch IGBT and 6-inch silicon carbide, mastered the design and manufacturing technology of MOSFET chips and SBD chips with core independent intellectual property rights, and built a complete set of 4-inch and 6-inch compatible professional silicon carbide chip manufacturing platforms with advanced silicon carbide technology, full-voltage MOSFET and SBD chip products can be used in new energy vehicles, rail transit, industrial transmission and other fields. In 2021, the company will launch a silicon carbide high-power electric drive platform C- Power220. In April 2022, the company will implement a silicon carbide chip production line technical capability improvement construction project with a total investment of 0.462 billion yuan to upgrade the company's planar gate silicon carbide MOSFET chip technical capability to trench gate silicon carbide MOSFET chip research and development capability. The existing 4-inch silicon carbide chip line will be upgraded to 6-inch silicon carbide chip line, and the production capacity will also be upgraded from 10000 to 25000 pieces/year.
According to the introduction of Huibo Information Public Number, Times Electric Company has built an industrialization base of 6-inch bipolar devices, 8-inch IGBT and 6-inch silicon carbide, mastered the design and manufacturing technology of MOSFET chips and SBD chips with core independent intellectual property rights, and built a complete set of 4-inch and 6-inch compatible professional silicon carbide chip manufacturing platforms with advanced silicon carbide technology, full-voltage MOSFET and SBD chip products can be used in new energy vehicles, rail transit, industrial transmission and other fields. In 2021, the company will launch a silicon carbide high-power electric drive platform C- Power220. In April 2022, the company will implement a silicon carbide chip production line technical capability improvement construction project with a total investment of 0.462 billion yuan to upgrade the company's planar gate silicon carbide MOSFET chip technical capability to trench gate silicon carbide MOSFET chip research and development capability. The existing 4-inch silicon carbide chip line will be upgraded to 6-inch silicon carbide chip line, and the production capacity will also be upgraded from 10000 to 25000 pieces/year.
The company's products are not only well received in the country, but also exported to East Asia, Southeast Asia, Europe, the Middle East and South America and other countries and regions, has been generally recognized.
Contact Information
Address: No.10 Shengli Road, Yangcun Street, Wuqing District, Tianjin
